PART |
Description |
Maker |
KTC3551T KTC3551T07 |
TSM PACKAGE
|
KEC(Korea Electronics)
|
KTA1544T KTA1544T05 |
TSM PACKAGE
|
KEC(Korea Electronics)
|
KBPC810 KBPC8005 KBPC801 KBPC802 KBPC804 KBPC806 K |
1000V Bridge in a D-72 package 50V Bridge in a D-72 package 100V Bridge in a D-72 package 200V Bridge in a D-72 package 400V Bridge in a D-72 package 600V Bridge in a D-72 package 800V Bridge in a D-72 package
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International Rectifier
|
IRKD56 IRKD56_04A IRKD56_06A IRKD56_08A IRKD56_10A |
ADD-A-pak GEN V Power Modules 地址给柏V电源模块 ADD-A-pak GEN V Power Modules 地址给柏根V电源模块 Multiconductor Cable; Number of Conductors:2; Conductor Size AWG:16; No. Strands x Strand Size:Solid; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes RoHS Compliant: Yes 地址给柏根V电源模块 (IRKJ56 / IRKJ71) ADD-A-pak GEN V Power Modules 800V Common Cathode in a ADD-A-Pak package 800V Doubler in a ADD-A-Pak package 800V Single Diode in a ADD-A-Pak package 1600V Common Cathode in a ADD-A-Pak package 1600V Doubler in a ADD-A-Pak package 1600V Single Diode in a ADD-A-Pak package 1600V Common Anode in a ADD-A-Pak package 1200V Common Cathode in a ADD-A-Pak package 1400V Common Cathode in a ADD-A-Pak package 1000V Common Cathode in a ADD-A-Pak package 800V Common Anode in a ADD-A-Pak package 1200V Doubler in a ADD-A-Pak package 1200V Single Diode in a ADD-A-Pak package 1000V Doubler in a ADD-A-Pak package 1200V Common Anode in a ADD-A-Pak package 1400V Doubler in a ADD-A-Pak package 1400V Single Diode in a ADD-A-Pak package 1400V Common Anode in a ADD-A-Pak package 1000V Single Diode in a ADD-A-Pak package 1000V Common Anode in a ADD-A-Pak package ADD-A-pak GEN V Power Modules
|
International Rectifier, Corp. IRF[International Rectifier]
|
4GBL01 4GBL02 4GBL04 4GBL06 4GBL08 |
100V Bridge in a GBL package 200V Bridge in a GBL package 400V Bridge in a GBL package 600V Bridge in a GBL package 800V Bridge in a GBL package
|
International Rectifier
|
SD1100C..CSERIES 2612 SD1100C04C SD1100C08C SD1100 |
3200V 1100A Std. Recovery Diode in a B-43 (E-Puk)package 3000V 1100A Std. Recovery Diode in a B-43 (E-Puk)package 2500V 1100A Std. Recovery Diode in a B-43 (E-Puk)package 2000V 1400A Std. Recovery Diode in a B-43 (E-Puk)package 1600V 1400A Std. Recovery Diode in a B-43 (E-Puk)package 1200V 1400A Std. Recovery Diode in a B-43 (E-Puk)package 800V 1400A Std. Recovery Diode in a B-43 (E-Puk)package 400V 1400A Std. Recovery Diode in a B-43 (E-Puk)package From old datasheet system STANDARD RECOVERY DIODES
|
International Rectifier
|
AM29DL162DT120WCE AM29DL162DT120WCEN AM29DL163DB12 |
400V Single N-Channel Hi-Rel MOSFET in a TO-205AF package; A JANTXV2N6792 with Standard Packaging x8/x16 Flash EEPROM 100V Single N-Channel Hi-Rel MOSFET in a TO-205AF package; A IRLF120 with Standard Packaging 500V Single N-Channel Hi-Rel MOSFET in a TO-204AE package; A IRF460 with Standard Packaging 400V Single N-Channel Hi-Rel MOSFET in a TO-205AF package; A IRFF310 with Standard Packaging 100V Single N-Channel Hi-Rel MOSFET in a TO-257AA package; A IRFY140CM with Standard Packaging 60V Single N-Channel Hi-Rel MOSFET in a D3 package; A IRFMJ044 with Standard Packaging -100V Single P-Channel Hi-Rel MOSFET in a TO-257AA package; A IRFY9140CM with Standard Packaging x8/x16闪存EEPROM 55V Single N-Channel Hi-Rel MOSFET in a TO-257AA package; A IRF5YZ48CM with Standard Packaging x8/x16闪存EEPROM 400V Single N-Channel Hi-Rel MOSFET in a TO-205AF package; A JANTXV2N6786 with Standard Packaging EEPROM -100V Single P-Channel Hi-Rel MOSFET in a TO-257AA package; A IRF5Y9540CM with Standard Packaging x8/x16闪存EEPROM -100V Single P-Channel Hi-Rel MOSFET in a TO-204AA package; A IRF9130 with Standard Packaging x8/x16闪存EEPROM 100V Single N-Channel Hi-Rel MOSFET in a 18-pin LCC package; A JANTX2N6782U with Standard Packaging x8/x16闪存EEPROM 1000V Single N-Channel Hi-Rel MOSFET in a TO-204AA package; A IRFAG40 with Standard Packaging EEPROM
|
PLX Technology, Inc.
|
OM6059SB OM6056 OM6061SB OM6056SB OM6057SB OM6058S |
High Current, High Voltage 500V , 58 Amp N-Channel, MOSFET(大电流,高电压,500V , 58A,N沟道,MOS场效应管) POWER MOSFETS IN A HERMETIC ISOLATED POWER BLOCK PACKAGE 100V Single N-Channel Hi-Rel MOSFET in a PB-3A package 500V Single N-Channel Hi-Rel MOSFET in a PB-3A package 600V Single N-Channel Hi-Rel MOSFET in a PB-3A package 200V Single N-Channel Hi-Rel MOSFET in a PB-3A package
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List of Unclassifed Manufacturers International Rectifier ETC[ETC]
|
EFRQ1200480R40-026 EFRQ600240R40-026 EFRQ1200480D5 |
CMOS Programmable Peripheral Interface; Temperature Range: -40°C to 85°C; Package: 44-MQFP T&R Single Event Hardened High-Speed, Dual Output PWM; Temperature Range: -55°C to 125°C; Package: 16-SBDIP General Purpose Timers; Temperature Range: -40°C to 85°C; Package: 14-PDIP CMOS Octal Bus Transceiver; Temperature Range: -40°C to 85°C; Package: 20-CerDIP CMOS Programmable Peripheral Interface; Temperature Range: -40°C to 85°C; Package: 44-PLCC T&R General Purpose Timers; Temperature Range: -40°C to 85°C; Package: 8-SOIC General Purpose Timers; Temperature Range: -40°C to 85°C; Package: 8-PDIP General Purpose Timers; Temperature Range: -55°C to 125°C; Package: 14-CerDIP CMOS Programmable Interval Timer; Temperature Range: -40°C to 85°C; Package: 24-CerDIP CMOS 8-Bit/16-Bit Microprocessor; Temperature Range: -40°C to 85°C; Package: 40-PDIP CMOS Priority Interrupt Controller; Temperature Range: -40°C to 85°C; Package: 28-CerDIP CMOS Programmable Peripheral Interface; Temperature Range: -40°C to 85°C; Package: 44-MQFP
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Honeywell International, Inc. Air Cost Control
|
BYP35A0506 BYP35A05 BYP35A1 BYP35A2 BYP35A3 BYP35A |
35 A, 300 V, SILICON, RECTIFIER DIODE METAL PACKAGE-1 35 A, 50 V, SILICON, RECTIFIER DIODE METAL PACKAGE-1 35 A, 100 V, SILICON, RECTIFIER DIODE METAL PACKAGE-1 35 A, 600 V, SILICON, RECTIFIER DIODE METAL PACKAGE-1 35 A, 200 V, SILICON, RECTIFIER DIODE METAL PACKAGE-1 35 A, 400 V, SILICON, RECTIFIER DIODE METAL PACKAGE-1 Silicon Press-Fit-Diodes
|
Semikron International
|